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Introduction to XAFS. Grant Bunker. Quantum Entanglement and Information Processing. Daniel Esteve. The Physical Chemist's Toolbox. Robert M. Computational Thermo-Fluid Dynamics. Petr A. Non-diffracting Waves. Hugo E. Zyun Francis Ezawa. Computational Materials Science. Tomasz A Wesolowski. Computational Chemistry.

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Errol G. Optical Tweezers. Giovanni Volpe. Advances in Quantum Chemistry. Erkki J. Numerical Relativity. Thomas W. Principles of Nano-Optics. Lukas Novotny.

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X-Ray Diffraction. Strong Light-Matter Coupling. Advances in Chemical Physics.

Electronics Nanoelectronics Devices and Materials mod02lec02

Stuart A. High-Pressure Fluid Phase Equilibria. Ulrich K Deiters.

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David Attwood. Tutorials in Molecular Reaction Dynamics. Mark Brouard. Magnetism of Surfaces, Interfaces, and Nanoscale Materials. Robert E. Advances in Wave Turbulence. Victor Shrira. William T.

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    Single-Ion Solvation. Philippe Hunenberger. Strongly Coupled Plasma Physics. Principles and Applications of Quantum Chemistry. Structured Light and Its Applications. David L. Micro- and Nanoscale Fluid Mechanics. Brian J. Chi Pok Cheung. Laser spectroscopy IX. Michael Feld. Physics with Trapped Charged Particles. Martina Knoop. Quantum Optics. Girish S. Patrick R. Fundamentals and Applications of Nanophotonics. Rubio, P. Castrillo, L. Pelaz, L. Barbolla, G. Gilmer, C.

    Quantum modeling of thin film solar cells

    Dabrowski and E. Weber Eds. Predictive Simulation of Semiconductor Processing, pp. Elsevier Science - J.

    Rubio, M. Jaraiz, P. Castrillo, I. He joined the Department of Electronics and Electrical Engineering at the University of Glasgow in , and served as a Head of Department in He has pioneered the simulations and the study of various sources of intrinsic parameter fluctuations in decanano- and nano-CMOS devices including random dopants, interface roughness and line edge roughness. In the last 5 years he has given also more than 65 invited talks at prestigious international conferences and meetings in Europe, USA and Japan.

    Quantum transport for future nano-CMOS

    Intrinsic parameter fluctuations associated with discreteness of charge and granularity of matter are now a major factor limiting scaling and integration. The accurate modelling and simulation of such effects is a very important for the development of the present and next generations semiconductor device and their integration of giga-transistor count chips. The impact of interface roughness and stray charges on the current variations in nanowire transistors. He is the author or co-author of more than technical journal papers and communications at international conferences including invited contributions.

    He is the author or the editor of 17 books, and he has organized 16 international conferences. His expertise is in the area of the electrical characterization and modeling of semiconductor materials and devices, with special interest for silicon-on-insulator structures. He has supervised more than 60 PhD completions.

    Lecture: Characterization techniques. The goal of this class is to offer a comprehensive view of the general strategy and dedicated methods for electrical characterization of semiconductor materials and devices.